/
Navigation
Chronicles
Browse all articles
Explore
Semantic exploration
Research
Entity momentum
Nexus
Correlations & relationships
Story Arc
Topic evolution
Drift Map
Semantic trajectory animation
Posts
Analysis & commentary
Pulse API
Tech news intelligence API
Browse
Entities
Companies, people, products, technologies
Domains
Browse by publication source
Detection
Concept Search
Semantic similarity search
High Impact Stories
Top coverage by position
Sentiment Analysis
Positive/negative coverage
Anomaly Detection
Unusual coverage patterns
Analysis
Rivalry Report
Compare two entities head-to-head
Semantic Pivots
Narrative discontinuities
Crisis Response
Event recovery patterns
Connected
Search: /
Command: ⌘K
Embeddings: large
TEXXR

Chronicles

The story behind the story

← → days · ↑ ↓ browse · Enter similar · o open

Nantero raises $21M for ultra-dense carbon nanotube NRAM memory, brings total raised to date to $110M+

Nantero has raised $21 million in funding for its carbon nanotube memory devices, which are an alternative to mainstream semiconductor chips.  —  The Woburn, Mass.-based company makes …

VentureBeat Dean Takahashi

Context & Ripple Effects

In late 2016, Nantero pulled in $21 million for NRAM — memory built from carbon nanotubes rather than the silicon structures behind mainstream DRAM and flash — pushing its lifetime fundraising past $110 million. The round matters because it kept alive one of the longest-running bets that a non-silicon material could displace incumbent memory at commercial scale.

That bet did not stay lonely. Four years later Antaios raised $11M for SOT-MRAM aimed at the same embedded-memory and SRAM-cache sockets, Dresden-based Ferroelectric Memory later drew a €100M round for energy-saving memory chips, and the US DOD put CHIPS Act money into hybrid gain cell memory that pairs DRAM density with SRAM speed — a steady drip of capital into every niche where conventional memory falls short.

First-order effects

  • The $21M funds Nantero's push to move carbon nanotube NRAM from lab material toward manufacturable product, with cumulative backing now above $110M signaling investor patience with a long development cycle.
  • Chipmakers evaluating next-generation embedded and standalone memory gain one more qualified candidate beyond MRAM and ferroelectric approaches already in the pipeline.

Second-order effects

  • Alternative-memory startups compete for the same sockets, so Antaios's SOT-MRAM and Ferroelectric Memory's energy-saving chips become direct substitutes Nantero must out-engineer on density, endurance, and cost per bit.
  • Incumbent DRAM and flash suppliers face a growing field of challengers at their margins — embedded non-volatile memory and low-power cache first — pressuring them to respond with their own emerging-memory roadmaps.

Third-order effects

  • If the funding pattern holds, 'memory' fragments from a two-technology market (DRAM plus NAND) into a portfolio of application-specific technologies, with public money — as in the CHIPS Act gain-cell grant — joining venture capital in picking winners.
  • Carbon nanotubes themselves are being validated as more than a research curiosity, with C12's later carbon-nanotube quantum computing raise showing the material attracting capital across multiple compute categories.

The trend: Venture and state capital are steadily funding alternatives to silicon DRAM and flash, betting that specialized memories will carve up what is today a consolidated market.