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VOICE ARCHIVE

Florin Manaila

@aideepdive
1 posts
2021-12-16
IBM and Samsung Electronics have jointly announced a breakthrough in semiconductor design utilizing a new vertical transistor architecture that demonstrates a path to scaling beyond nanosheet, and has the potential to reduce energy...https://www.linkedin.com/ ... https://www.youtube.com/...
2021-12-16 View on X
The Verge

IBM and Samsung say Vertical Transport Field Effect Transistors, an alternative to FinFET chip designs, can offer 2x performance, amid similar claims from Intel

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